This system is newly developed R&D equipment for layer making technology by using Plasma Bias CVD Method.

The plasma is generated by the R&F between parallel-plate cathodes.
By relocated the cathode position we can use this system for Etching and CVD simultaneously and the heater is located in substrate holder.
Application : Plasma CVD Testing

Method for layer making : Parallel-plate type

Substrate Holder : Heating (Max 500กษ), Rotate and Level Adjustment

Cathode : Gas Nozzle

Exhaust : High Vacuum - RP, TURBO

Low Vacuum - MBP, RP

RF : 13.56MHz

Gas : 5EA, MFC

Pressure Control : APC